Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...

SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...

Since the first commercially available silicon-based power MOSFETs were introduced almost 40 years ago, they (along with their cousins, IGBTs) have been the primary power-handling control component in ...

GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire.com/ -- STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches ...

All questions and answers are based on the 2017 NEC. Q. Per the NEC, overcurrent protection devices must be placed at what location in branch-circuit or feeder conductors? A. Except as permitted by ...