Semiconductor Engineering

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
AZoNano

Shrinking 2D Nanoribbons to 35 nm Boosts Transistor Current

Researchers showed that narrowing the monolayer TMD nanoribbon transistor channel to about 35 nm increased the median ...
EDN

GaN switch streamlines power conversion

Infineon’s CoolGaN 650-V G5 bidirectional switch (BDS) integrates two switches in a single device to actively block current and voltage in both directions. Its monolithic common-drain design with a ...
Nanowerk

Dual-gate vertical transistor enables stable nanoscale 3D chip stacking

Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports scalable 3D semiconductor integration. (Nanowerk News) Researchers at the Daegu ...
Nature

Autonomous self-healing supramolecular polymer transistors for skin electronics

Skin-like field-effect transistors are key elements of bio-integrated devices for future user-interactive electronic-skin applications. Despite recent rapid developments in skin-like stretchable ...